4.6 Article

Contactless photoconductivity measurements on (Si) nanowires

期刊

APPLIED PHYSICS LETTERS
卷 96, 期 5, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3280057

关键词

elemental semiconductors; nanowires; photoconductivity; polarisability; semiconductor quantum wires; silicon

资金

  1. ANR QuantADN
  2. NanoTERA

向作者/读者索取更多资源

Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this letter we investigate phototransport in both bulk silicon and silicon nanowires using a superconducting multimode resonator operating at frequencies between 0.3 and 3 GHz. We find that whereas the bulk Si response is mainly dissipative, the nanowires exhibit a large dielectric polarizability. This technique is contactless and can be applied to other semiconducting nanowires and molecules.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据