期刊
APPLIED PHYSICS LETTERS
卷 97, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3494533
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资金
- Ministerio de Ciencia e Innovacion [TEC2008-01883-E/TEC]
- Ministerio de Educacion y Ciencia [TEC200909350]
We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of multidomain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494533]
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