期刊
APPLIED PHYSICS LETTERS
卷 97, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3512865
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资金
- NSFC [50872136, 50972147, 50921004]
- CAS [KJCX2-YW-231]
We developed an ambient pressure chemical vapor deposition (CVD) for rapid growth of high-quality graphene films on Cu foils. The quality and growth rate of graphene films are dramatically increased with decreasing H-2 concentration. Without the presence of H-2, continuous graphene films are obtained with a mean sheet resistance of < 350 Omega/sq and light transmittance of 96.3% at 550 nm. Because of the ambient pressure, rapid growth rate, absence of H-2 and readily available Cu foils, this CVD process enables inexpensive and high-throughput growth of high-quality graphene films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3512865]
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