Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p(3/2) core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at similar to 5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of similar to 4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase. (c) 2010 American Institute of Physics. [doi:10.1063/1.3481800]