4.6 Article

Controlled domain-wall injection in perpendicularly magnetized strips

期刊

APPLIED PHYSICS LETTERS
卷 96, 期 22, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3432703

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lanthanum compounds; magnesium compounds; magnetoresistance; nanowires; pulsed laser deposition; strontium compounds

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  1. Ministry of Economic Affairs
  2. Netherlands Organization for Scientific Research (NWO)

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For applications of domain wall (DW) motion in magnetic devices, it is vital to control the creation and position of the DW. We use Ga(+) irradiation of Pt/Co/Pt strips to locally change the perpendicular magnetic anisotropy. This allows us to controllably inject DWs into a device at a tunable field. The observed initial linear decrease and subsequent increase in the DW injection field upon increasing irradiation dose are explained by micromagnetic simulations and an analytical one-dimensional model. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432703]

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