期刊
APPLIED PHYSICS LETTERS
卷 96, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3429586
关键词
amorphous semiconductors; carrier density; carrier mobility; conduction bands; Fermi level; gallium compounds; II-VI semiconductors; indium compounds; semiconductor doping; semiconductor thin films; thin film transistors; two-photon processes; ultraviolet radiation effects; wide band gap semiconductors
资金
- Korea Science and Engineering Foundation
- Ministry of Education, Science, and Technology [R11-2005-048-00000-0]
- Ministry of Knowledge Economy [F0004061-2009-32]
- Korean Government
We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to similar to 10(18) cm(-3) from the background level of 10(16) cm(-3), as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at similar to 10(8) and field-effect mobility at 22.7 cm(2)/V s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3429586]
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