期刊
APPLIED PHYSICS LETTERS
卷 97, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3499273
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资金
- NSF [DMR-0705127, DMR-0507146, ECCS-0708759, DMR-0906443]
- MRSEC [DMR-0820404]
- DOE EPSCoR [DE-FG02-04ER46142]
- Research Corporation for Science [7134]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0906443] Funding Source: National Science Foundation
Homoepitaxial Sr1+xTiO3+delta films with -0.2 <= x <= 0.25 grown by reactive molecular-beam epitaxy on SrTiO3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Nonstoichiometry for strontium-deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution of the disorder-activated mechanism in Raman scattering. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499273]
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