期刊
APPLIED PHYSICS LETTERS
卷 96, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3309701
关键词
electron mobility; elemental semiconductors; field effect transistors; graphene; nanostructured materials; self-assembly; silicon compounds
资金
- MEXT KAKENHI [17069004, 21241038]
Anisotropic transport in graphene field-effect transistors fabricated on a vicinal SiC substrate with a self-organized periodic nanofacet structure is investigated. Graphene thermally grown on a vicinal substrate contains two following regions: atomically flat terraces and nanofacets (atomically stepped slopes). The graphene film at a nanofacet is continuously connected between two neighboring terrace films. Anisotropic transport properties are clearly observed, indicating a difference in the graphene properties of the two regions. The observed anisotropic properties are discussed in terms of the effects of nanofacet structures on conductivity and electron mobility.
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