Vertical polyelectrolyte-gated organic field-effect transistors

Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography. Owing to the use of a polyelectrolyte, our vertical electrolyte-gated organic field-effect transistors (VEGOFETs), with channel lengths of 2.2 and 0.7 mu m, operate at voltages below one volt. The VEGOFETs show clear saturation and switch on and off in 200 mu s. A vertical geometry to achieve short-transistor channels and the use of an electrolyte makes these transistors promising candidates for printed logics and drivers with low operating voltage. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3488000]