Microcrystalline silicon thin-film transistors operating at very high frequencies

The switching behavior of hydrogenated microcrystalline silicon thin-film transistors (TFTs) was examined and switching frequencies exceeding 20 MHz were measured for short channel devices. The microcrystalline silicon TFTs were prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with plastic substrates. The realized microcrystalline silicon transistors exhibit high electron charge carrier mobilities of 130 cm(2)/V s. The switching frequency is limited by the contact resistances and overlap capacitances between the gate and the drain/source electrodes. Switching frequencies larger than 20 MHz were measured for transistors with a channel length of 5 mu m. The high switching frequencies facilitate the realization of radio-frequency identification tags operating at 13.56 MHz. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3481391]