期刊
PHYSICAL REVIEW LETTERS
卷 93, 期 21, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.93.216805
关键词
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Spin dependent transport in a ferromagnet-superconductor single-electron transistor is studied theoretically taking into account spin accumulation, spin relaxation, gap suppression, and charging effects. A strong dependence of the gap on the magnetic state of the electrodes is found, which gives rise to a magnetoresistance of up to 100%. We predict that fluctuations of the spin accumulation can play such an important role as to cause the island to fluctuate between the superconducting and normal states. Furthermore, the device exhibits a nearly complete gate-controlled spin-valve effect.
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