Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5x0.3 mum(2) device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2x10(5) A/cm(2) despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.