☆ 4.6 Article

Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

APPLIED PHYSICS LETTERS (2010)

主要评分表示论文的整体质量水平。次要评分独立反映论文的优点或缺点。

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started