4.6 Article

A high frequency GaN Lamb-wave sensor device

期刊

APPLIED PHYSICS LETTERS
卷 96, 期 19, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3427484

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biosensors; chemical sensors; gallium compounds; III-V semiconductors; membranes; molecular biophysics; proteins; surface acoustic wave delay lines; wide band gap semiconductors

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  1. IESL-FORTH [SigmaPiA00004-1, PiAP000120-1]
  2. GSRT (PENED)

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Lamb-wave devices are characterized by high sensitivity to surface perturbations due to acoustic energy confinement in a thin piezoelectric membrane. In this paper, a Lamb-wave delay line device based on a single crystalline GaN membrane is presented. The observed operating frequency of 178.82 MHz was found to be in excellent agreement with numerical analysis predictions. The device as a chemical sensor was evaluated during the application of various concentrations of glycerol on the device surface; its ability to operate as a biosensor was also assessed during the detection of the specific binding of a protein (IgG) to the device surface. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3427484]

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