期刊
APPLIED PHYSICS LETTERS
卷 97, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3480610
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资金
- EC [MRTN-CT-2006-035735]
- French ANR [ANR-07-Blanc-0161]
- Spanish Government
- Juan de la Cierva grant
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8 off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magnetotransport measurements. We find a moderate p-type doping, high carrier mobility, and half integer quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry. (C) 2010 American Institute of Physics. [doi:10.1063/1.3480610]
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