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Structural and dielectric properties of epitaxial Ba1-xSrxTiO3 films grown on LaAlO3 substrates by polymer-assisted deposition

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APPLIED PHYSICS LETTERS
卷 85, 期 21, 页码 5007-5009

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AMER INST PHYSICS
DOI: 10.1063/1.1827927

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Epitaxial Ba1-xSrxTiO3 (BST) thin films with different Ba/Sr ratio (x=0.1-0.9 with an interval of 0.1) have been grown on (001) LaAlO3 substrates using polymer-assisted deposition. Dielectric measurements show that the films have dielectric properties comparable to the BST films grown by the pulsed laser deposition. Systematic changes in the lattice parameters and dielectric behavior with x values have been measured. The highest dielectric constant (similar to1010) and tunability (similar to69%) at 1 MHz and room temperature have been obtained at x=0.3, which is at the phase boundary of tetragonal and cubic structures. (C) 2004 American Institute of Physics.

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