期刊
APPLIED PHYSICS LETTERS
卷 97, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3518071
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- KIST
- ONR [N0014-09-01-0177]
We investigated interface and electrical properties of Ge-based Schottky and tunnel diodes with crystalline MgO barriers. Following a simple cleaning procedure not requiring a high-temperature anneal, x-ray data indicated smooth interfaces and that the MgO tunnel barrier was highly textured. Transport characteristics were fitted using a self-consistent field Simmons-Schottky current-voltage model, yielding the Schottky and tunnel barrier heights for the devices and the distribution of tunneling currents. Considering the Fermi-level depinning and the ratio of Schottky to tunneling currents for each barrier thickness, we find that a MgO thickness of 15 angstrom yields the best transport properties in this system. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518071]
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