期刊
APPLIED PHYSICS LETTERS
卷 96, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3373526
关键词
cadmium compounds; charge injection; distortion; II-VI semiconductors; Pockels effect; semiconductor-metal boundaries; space charge; wide band gap semiconductors; X-ray effects; zinc compounds
资金
- Ministry of Education of the Czech Republic [MSM 0021620834]
- Engineering and Physical Sciences Research Council [EP/D048737/1] Funding Source: researchfish
- Science and Technology Facilities Council [ST/F00690X/1] Funding Source: researchfish
- EPSRC [EP/D048737/1] Funding Source: UKRI
- STFC [ST/F00690X/1] Funding Source: UKRI
Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures < 270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection.
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