期刊
APPLIED PHYSICS LETTERS
卷 96, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3421535
关键词
cathodoluminescence; erbium; gallium compounds; III-V semiconductors; luminescence; molecular beam epitaxial growth
资金
- Grants-in-Aid for Scientific Research [22656004] Funding Source: KAKEN
Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN. (C) 2010 American Institute of Physics. [doi:10.1063/1.3421535]
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