期刊
APPLIED PHYSICS LETTERS
卷 96, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3429682
关键词
ab initio calculations; dielectric thin films; electrodes; failure analysis; hafnium compounds; leakage currents; MOSFET; nickel compounds; semiconductor device breakdown; tantalum compounds; titanium compounds; vacancies (crystal)
资金
- Ministry of Education (MOE), Singapore [T206B1205]
- MOE
In this paper, the mechanism and physics governing the breakdown and recovery in metal-gated high-kappa (MG-HK) dielectric stacks is investigated. Postbreakdown recovery is observed in NiSi and TiN-gated, but not TaN-gated, HfO2-based logic devices in voltage-stress tests. Failure analysis studies reveal that metal-filamentation, besides oxygen vacancies, is responsible for the breakdown of these MG-HK dielectrics. First-principle studies show that the 5d orbitals of Hf and migrated metal atoms in the filamentation process reduce the band gap and increase the leakage current, eventually causing percolative breakdown of the dielectric. Postbreakdown recovery is feasible only for gate stacks with a low enough defect formation energy, which can be realized by selecting appropriate gate electrode materials, such as NiSi and TiN. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3429682]
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