Energy-band diagram of metal/Lu2O3/silicon structures

Internal photoemission spectroscopy has been used to determine the band alignment in Lu2O3 based metal-oxide-semiconductor structures. The Si/Lu2O3 interface conduction- and valence-band offsets were determined to be 2.1+/-0.1 and 2.6+/-0.1 eV, respectively. The energy barrier for electrons at the Al/Lu2O3 interface is 2.4+/-0.1 eV. The value of the Lu2O3 transport band gap, obtained by photoconductivity measurements, was found to be 5.8+/-0.1 eV. Optical absorption spectroscopy gave a value of 4.89+/-0.02 eV for the Lu2O3 optical band gap. (C) 2004 American Institute of Physics.