Mechanically flexible thin film transistors and logic gates on plastic substrates by use of single-crystal silicon wires from bulk wafers

This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm(2)/V s, subthreshold voltage of 100 mV/dec and on/off ratios >10(7). The inverter shows good performance and voltage gains of similar to 2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.