期刊
APPLIED PHYSICS LETTERS
卷 94, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3110968
关键词
bonds (chemical); CMOS integrated circuits; electric moments; electronegativity; high-k dielectric thin films; semiconductor-insulator boundaries; silicon compounds
资金
- Ministry of Education, Culture, Sports, Science and Technology in Japan.
A model for the physical origin of the dipole formed at high-k/SiO2 interface is proposed. In our model, an areal density difference of oxygen atoms at high-k/SiO2 interface is considered as an intrinsic origin of the dipole formation. The oxygen movement from higher-oxygen-density side to a lower-oxygen-density one will determine the direction of interface dipole. The bonding energy relaxation at the interface explains why the oxygen density difference is the driving force of the oxygen movement. Our model enables the prediction of the dipole directions for candidate gate dielectrics, including those so far not reported.
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