期刊
APPLIED PHYSICS LETTERS
卷 95, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3192408
关键词
Boltzmann equation; gallium arsenide; III-V semiconductors; microcavities; numerical analysis; photoluminescence; polaritons
资金
- ANR [ANR-07-NANO-005]
- C'nano Ile-de-France
We report on polariton condensation in a planar GaAs microcavity under nonresonant optical excitation. Angularly resolved photoluminescence measurements demonstrate polariton condensation for temperature up to 40 K. Numerical simulations using Boltzmann equations give an overall description of the observed condensation for various detunings and temperatures. This model highlights the importance of the polariton relaxation rate as compared to the polariton decay for condensation to occur on the lowest energy polariton states.
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