4.6 Article

Vacancy phonon scattering in thermoelectric In2Te3-InSb solid solutions

期刊

APPLIED PHYSICS LETTERS
卷 94, 期 12, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3109788

关键词

doping; indium compounds; phonon-defect interactions; point defect scattering; semiconductor materials; solid solutions; thermal conductivity; thermoelectricity; vacancies (crystal)

资金

  1. Michigan State University Intramural Research Grant Program.

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Solid solution formation is a common and effective approach to reduce the lattice thermal conductivity for thermoelectric materials because of additional phonon scattering by point defects due to mass and strain fluctuations. This scattering is maximal for vacancies. In this paper we present an example of the strong effect of phonon-vacancy scattering for the InSb-In2Te3 system. The measured transport properties show a reduction by more than an order of magnitude of the lattice thermal conductivity. Further efforts are also made on optimization for thermoelectric applications through doping. Our results indicate that these solid solutions are a prospective new-type thermoelectric material.

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