4.6 Article

Direct observation of single dopant atom in light-emitting phosphor of β-SiAlON:Eu2+

期刊

APPLIED PHYSICS LETTERS
卷 94, 期 4, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3076110

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aluminium compounds; doping profiles; europium; phosphors; scanning electron microscopy; silicon compounds; transmission electron microscopy

资金

  1. JST-CREST
  2. Nanotechnology Support Project by MEXT
  3. Japan Society for the Promotion of Science

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Rare-earth doped nitride attracts considerable attention because of its application as a light-emitting phosphor. The atomic site of dopants in a crystal is important for the development of advanced materials. Here, we directly observe a single Eu dopant atom in phosphor beta-SiAlON using scanning transmission electron microscopy (STEM). A STEM annular dark-field image reveals that a Eu dopant exists in a continuous atomic channel in a beta-Si3N4 structure. The image contrast of the single Eu dopant is confirmed based on the comparison of experimental and simulation results.

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