A ultraviolet-visible-near infrared photodetector using nanocrystalline Si superlattice

We report a simple silicon/Si nanocrystal superlattice/indium tin oxide structure as a photodetector, which shows a very high photosensitivity in a wide wavelength range from ultraviolet (UV) to near infrared. The fabrication of this photodetector structure is easily integrated into a standard process of Si microelectronics. The light and dark current versus voltage characteristics and photoluminescence of the photodetector show that the optical down-conversion of UV light by the superlattice layer is the main reason of the enhanced UV response.