期刊
APPLIED PHYSICS LETTERS
卷 95, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3206739
关键词
current density; electro-optical devices; gallium compounds; III-V semiconductors; indium compounds; photoluminescence; quantum well lasers; wide band gap semiconductors
资金
- German Federal Ministry for Education and Research (BMBF) [13N9373]
We demonstrate direct green laser operation from InGaN based diodes at wavelengths as long as 515.9 nm with 50 mW output power in pulse operation. A factor of similar to 10 defect reduction for the In-rich InGaN quantum wells based on improvements of the epitaxial growth process and design of the active layers on c-plane GaN-substrates makes it possible to demonstrate laser operation at room temperature. Micrometer-scale photoluminescence mappings and electro-optical measurements confirm the reduction of nonradiative defects in the emitting layers. The 11 mu m broad-area gain-guided laser structures were driven in pulse operation to minimize thermal effects and to accurately measure the laser temperature dependence. The threshold current density was similar to 9 kA/cm(2) and the fitted slope efficiency had a value of similar to 130 mW/A for an optical output up to 50 mW.
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