期刊
APPLIED PHYSICS LETTERS
卷 94, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3082098
关键词
aluminium compounds; buffer layers; elemental semiconductors; gallium compounds; III-V semiconductors; indium compounds; laser modes; molecular beam epitaxial growth; nucleation; optical fabrication; optical materials; quantum well lasers; silicon
资金
- Region Languedoc-Roussillon
We report on a GaSb-based type-I laser structure grown by molecular beam epitaxy on a (001) silicon substrate. A thin AlSb nucleation layer followed by a 1 mu m thick GaSb buffer layer was used to accommodate the very large lattice mismatch existing with the silicon substrate. Processed devices with mesa geometry exhibited laser operation in pulsed mode with a duty cycle up to 10% at room temperature.
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