期刊
APPLIED PHYSICS LETTERS
卷 95, 期 22, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3268788
关键词
capacitance measurement; electrodes; elemental semiconductors; gallium arsenide; graphite; III-V semiconductors; Schottky barriers; Schottky diodes; semiconductor-metal boundaries; silicon; silicon compounds; thermionic emission; wide band gap semiconductors
资金
- NSF [DMR-0704240, DMR-0851707]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0851707] Funding Source: National Science Foundation
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.
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