Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (mu(FE)) of 15.1 cm(2)/V s, subthreshold slope of 0.25 V/dec, threshold voltage (V-TH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 mu m thick PI substrate withstood bending down to R=3 mm under tension and compression without any performance degradation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3159832]