期刊
APPLIED PHYSICS LETTERS
卷 94, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3148342
关键词
annealing; field effect transistors; graphene; logic gates; nanostructured materials
The operation of a digital logic inverter consisting of one p- and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. Both transistors initially exhibited p-type behavior at low gate voltages, since air contamination shifted their Dirac points from zero to a positive gate voltage. Contaminants in one transistor were removed by electrical annealing, which shifted its Dirac point back and therefore restored n-type behavior. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step toward the development of digital integrated circuits on graphene.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据