期刊
APPLIED PHYSICS LETTERS
卷 94, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3062938
关键词
elemental semiconductors; germanium; ion implantation; photodetectors; p-i-n photodiodes; printing
资金
- USAFOSR [FA9550-06-1-0487]
This letter presents studies of multiwavelength flexible photodetectors on a plastic substrate by use of printing transferred single-crystal germanium (Ge) membranes. Ge membranes of 250 nm thickness with selectively ion-implantation doped regions were released from a germanium-on-insulator substrate and integrated with a 175-mu m-thick polyethylene terephthalate substrate via a dry printing technique. Photodiodes configured in lateral p-i-n configuration using the flexible Ge membranes with an intrinsic region width of 10 mu m exhibit an external quantum efficiency that varies from 5% at 411 nm to 42% at 633 nm under -1 V bias condition. These results demonstrate the potential of utilizing single-crystal Ge-membrane photodiodes for imaging applications and as solar cells on objects with arbitrary curvatures and shapes.
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