期刊
APPLIED PHYSICS LETTERS
卷 94, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3103288
关键词
dark conductivity; hole traps; metal-semiconductor-metal structures; nickel; photodetectors; semiconductor thin films; thin film sensors; titanium compounds; ultraviolet detectors; ultraviolet radiation effects
资金
- National Natural Science Foundation of China [60877041]
- Chinese National Programs for High Technology Research and Development
- Science and Technology Agency of Jilin Province [2006528, 20080330]
In this letter, metal-semiconductor-metal (MSM) TiO2 ultraviolet (UV) detectors with Ni electrodes have been fabricated. TiO2 thin films were prepared by sol-gel method. At 5 V bias, the dark current of the detector with Ni electrode was 1.83 nA. High photoresponse of 889.6 A/W was found under irradiation of 260 nm UV light, which was much higher than those of other wide bandgap UV detectors with MSM structure. The high photoresponse was due to the great internal gain caused by the hole trapping at interface. The rise time of the device was 13.34 ms and the fall time was 11.43 s.
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