Improved precision in strain measurement using nanobeam electron diffraction

Improvements in transmission electron microscopy have transformed nanobeam electron diffraction into a simple and powerful technique to measure strain. A Si0.69Ge0.31 layer, grown onto a Si substrate has been used to evaluate the precision and accuracy of the technique. Diffraction patterns have been acquired along a < 110 > zone axis using a FEI-Titan microscope and have been analyzed using dedicated software. A strain precision of 6 x 10(-4) using a probe size of 2.7 nm with a convergence angle of 0.5 mrad has been reached. The bidimensional distortion tensor in the plane perpendicular to the electron beam has been obtained. (C) 2009 American Institute of Physics. [doi:10.1063/1.3224886]