4.6 Article

Nonvolatile resistive switching in graphene oxide thin films

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APPLIED PHYSICS LETTERS
卷 95, 期 23, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3271177

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  1. Chinese Academy of Sciences (CAS)
  2. State Key Project of Fundamental Research of China (973 Program)
  3. National Natural Science Foundation of China, Zhejiang
  4. Ningbo Natural Science Foundations

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Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 10(4) s, and switching threshold voltages of less than 1 V. The switching effect could be understood by considering the desorption/absorption of oxygen-related groups on the GO sheets as well as the diffusion of the top electrodes. Our experiments indicate that GO is potentially useful for future nonvolatile memory applications. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3271177]

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