Hybrid InP-based photonic crystal lasers on silicon on insulator wires

We report on InP-based photonic crystal lasers operating at 1.585 mu m at room temperature, integrated with and evanescently coupled to silicon on insulator (SOI) waveguides. By optically pumping at 1.18 mu m through the SOI wires, pulsed laser emission from line defect photonic crystal waveguides accurately aligned (< 30 nm) to the silicon circuitry is demonstrated.