Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

Optical emission resulting from 405 nm selective photoexcitation of carriers in the GaInN/GaN quantum well (QW) active region of a light-emitting diode reveals two recombination channels. The first recombination channel is the recombination of photoexcited carriers in the GaInN QWs. The second recombination channel is formed by carriers that leak out of the GaInN QW active region, self-bias the device in forward direction, induce a forward current, and subsequently recombine in the GaInN active region in a spatially distributed manner. The results indicate dynamic carrier transport involving active, confinement, and contact regions of the device. (c) 2009 American Institute of Physics