期刊
APPLIED PHYSICS LETTERS
卷 95, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3192407
关键词
crystallisation; erbium compounds; photoluminescence; sol-gel processing; thin films
资金
- Ministry of Education, Science, Sports and Culture of Japan [19360005, 1907091]
- Grants-in-Aid for Scientific Research [19360005] Funding Source: KAKEN
Er silicates have been fabricated on SiO2/Si(100) substrates by the sol-gel method. In contrast to Si(100) substrates, on which the Er2SiO5 phase in general crystallizes, the alpha-Er2Si2O7 with the photoluminescence (PL) main peak at 1531 nm formed at 1200 degrees C. The integrated PL intensity of the alpha-Er2Si2O7 phase was about five to ten times stronger than that of the Er2SiO5 phase, and the alpha-Er2Si2O7 phase showed a relatively long decay time (100-300 mu s) in contrast to several tens of microseconds of the Er2SiO5 phase. Excess O from SiO2 layer may lead to the formation of the alpha-Er2Si2O7 phase.
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