期刊
APPLIED PHYSICS LETTERS
卷 94, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3119215
关键词
carbon; dielectric polarisation; doping; electrical resistivity; ferroelectric materials; ferroelectric storage; ferroelectric thin films; random-access storage
资金
- Singapore National Research Foundation [NRF-RF2008-07]
- NUS NanoCore
In this letter, we demonstrate a nonvolatile memory device in a graphene field-effect-transistor structure using ferroelectric gating. The binary information, i.e., 1 and 0, is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A nonvolatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface.
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