期刊
APPLIED PHYSICS LETTERS
卷 95, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3231444
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资金
- Department of Energy [DOE DE-FG0207ER46417]
- National Science Foundation [DMR-0820404, ECCS-0708759]
The effect of biaxial strain on the remanent polarization of epitaxial thin films of various ferroelectric materials is studied using phenomenological Landau-Devonshire theory. It is shown that the strain dependences of the remanent polarizations are strongly dependent on crystal symmetries and film orientations. For (001)(p)-oriented ferroelectric films with (distorted) rhombohedral symmetry, strain-induced polarization rotation leads to stronger strain dependences than in ferroelectric films with tetragonal or orthorhombic symmetries. For (111)(p)-oriented ferroelectric films with rhombohedral symmetry, however, the remanent polarization is less sensitive to the biaxial strain. (C) 2009 American Institute of Physics. [doi:10.1063/1.3231444]
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