期刊
APPLIED PHYSICS LETTERS
卷 95, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3183507
关键词
band structure; catalysts; indium compounds; materials preparation; photochemistry; radiation effects; semiconductor materials; semiconductor-insulator boundaries; transmission electron microscopy; ultraviolet spectra; visible spectra; X-ray diffraction; X-ray photoelectron spectra
资金
- China-Japan cooperation project of science and technology [2009DFA61090]
- National Basic Research Program of China [2007CB613301, 2007CB613305]
- National Natural Science Foundation of China [20528302]
In this study, the band structure of In2O3/N-InNbO4 composite was considered to be advantageous for the transportation and separation of photoexcited electron/hole pairs. This composite was synthesized and characterized by powder x-ray diffraction, UV-visible diffuse reflectance spectroscopy, transmission electron microscope, and x-ray photoelectrons spectroscopy. The photocatalytic experiments indicated the H-2 evolution rate of In2O3/N-InNbO4 composite was 27.3 mu mol h(-1) g(-1) under visible light irradiation (lambda>420 nm), which was 18.6 times the rate of In2O3 and 2.3 times the rate of N-InNbO4.
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