期刊
APPLIED PHYSICS LETTERS
卷 94, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3120765
关键词
amorphous semiconductors; annealing; carrier lifetime; diffusion; elemental semiconductors; hydrogen; hydrogenation; passivation; semiconductor thin films; silicon; surface chemistry
资金
- Australian Research Council
Excellent surface passivation of crystalline silicon wafers is known to occur following post-deposition thermal annealing of intrinsic a-Si:H thin-film layers deposited by plasma-enhanced chemical vapor deposition. In this work, layer thicknesses ranging from 5 to 50 nm were used to indirectly study the surface passivation mechanism by sequentially measuring the effective carrier lifetime as a function of annealing time and temperature. From this, an activation energy of 0.7 +/- 0.1 eV was calculated, suggesting that surface passivation is reaction-limited and not determined by a bulk hydrogen diffusion process. We conclude that the primary surface reaction stems from surface rearrangement of hydrogen already near the interface.
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