期刊
APPLIED PHYSICS LETTERS
卷 95, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3212737
关键词
Ge-Si alloys; localised states; molecular dynamics method; nanowires; phonons; reduction (chemical); semiconductor materials; semiconductor quantum wires; thermal conductivity
资金
- Ministry of Education of the Republic of Singapore [R-144-000-203-112]
- National University of Singapore [R-144-000-222-646]
By using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-xGex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-xGex NW might have promising application in thermoelectrics.
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