期刊
APPLIED PHYSICS LETTERS
卷 95, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3204695
关键词
bismuth compounds; ferroelectric thin films; indium; photovoltaic effects; polarisation; tin compounds
资金
- U.S. Department of Energy [DE-AC02-05CH11231, FEG02-01ER45885]
- National Science Foundation [DMR-0820404]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [820404] Funding Source: National Science Foundation
We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages similar to 0.8-0.9 V and external quantum efficiencies up to similar to 10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3/tin doped indium oxide interface.
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