相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From M-Structure InAs-GaSb Superlattices
Pierre-Yves Delaunay et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2009)
Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design
H. S. Kim et al.
APPLIED PHYSICS LETTERS (2008)
nBn detector, an infrared detector with reduced dark current and higher operating temperature
S. Maimon et al.
APPLIED PHYSICS LETTERS (2006)
Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes
I. Vurgaftman et al.
APPLIED PHYSICS LETTERS (2006)
Room-temperature InAsSb photovoltaic detectors for mid-infrared applications
H. Shao et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2006)
Interface band gap engineering in InAsSb photodiodes
M Carras et al.
APPLIED PHYSICS LETTERS (2005)
Band gap tuning of InAs/GaSb type-II superlattices for mid-infrared detection
HJ Haugan et al.
JOURNAL OF APPLIED PHYSICS (2004)
Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
QK Yang et al.
APPLIED PHYSICS LETTERS (2002)
分享论文
