期刊
APPLIED PHYSICS LETTERS
卷 95, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3177333
关键词
antireflection coatings; gallium compounds; III-V semiconductors; indium compounds; infrared detectors; photodetectors; superlattices
We describe a long wavelength infrared detector where an InAs/GaSb superlattice absorber is surrounded by a pair of electron-blocking and hole-blocking unipolar barriers. A 9.9 mu m cutoff device without antireflection coating based on this complementary barrier infrared detector design exhibits a responsivity of 1.5 A/W and a dark current density of 0.99x10(-5) A/cm(2) at 77 K under 0.2 V bias. The detector reaches 300 K background limited infrared photodetection (BLIP) operation at 87 K, with a black-body BLIP D(*) value of 1.1x10(11) cm Hz(1/2)/W for f/2 optics under 0.2 V bias.
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