期刊
APPLIED PHYSICS LETTERS
卷 94, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3094131
关键词
atomic layer deposition; copper compounds; photovoltaic cells; thin films; X-ray diffraction
资金
- UChicago Argonne, LLC
- U. S. Department of Energy Office of Science laboratory [DE-AC02-06CH11357]
Alternating exposure to bis(N,N-'-di-sec-butylacetamidinato)dicopper(I) and hydrogen sulfide is shown to produce high quality chalcocite (Cu2S) thin films by atomic layer deposition on silicon and fused silica substrates. The layer-by-layer chemical vapor deposition method enables conformal growth of the phase-pure material at 130 degrees C. X-ray diffraction reveals that polycrystalline high-chalcocite films are deposited preferentially oriented in the < 00l > plane. The optical properties of this naturally p-type absorber compare well with previous reports on single crystals, highlighting the applicability of the technique to nanostructured photovoltaics.
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