期刊
APPLIED PHYSICS LETTERS
卷 94, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3108084
关键词
aluminium compounds; electron holography; electron microscopy; gallium compounds; high electron mobility transistors; III-V semiconductors; indium compounds; semiconductor heterojunctions; two-dimensional electron gas; wide band gap semiconductors
资金
- Wright Patterson Air Force Base
- Swiss National Science Foundation [200021-107642/1]
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of similar to 2.1x10(13) cm(-2) was located in the GaN layer at similar to 0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85In0.15N layer was uniform and that Al0.85In0.15N/AlN and AlN/GaN interfaces were abrupt and well defined.
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