期刊
APPLIED PHYSICS LETTERS
卷 95, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3179413
关键词
elemental semiconductors; optical pumping; optical waveguides; semiconductor quantum dots; silicon; silicon compounds; superradiance
资金
- National Science Council (NSC) of the Republic of China [NSC97-2221-E-002-055, NSC 98-2623-E-002-002-ET]
A SiO2/SiOx/SiO2 strip-loaded waveguide with buried Si quantum dots is optically pumped to provide amplified spontaneous emission centered at 805 nm with spectral linewidth of 140 nm. By top-pumping the 350-nm-thick SiOx with He-Cd laser of 40 mW at 325 nm, the optical gain of 65 cm(-1) and loss coefficient of 5 cm(-1) are determined. Under a 785 nm small-signal injection diagnosis, the power-dependent gain curve fitting with gain-saturated amplifier model reveals a peak gain of 27 dB (not including waveguide loss) and a net power gain of 9.5 dB for the Si-rich SiOx waveguide amplifier with a length of 5 mm.
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